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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Second Edition 2020 edition
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics
425 pages, 183 Illustrations, color; 130 Illustrations, black and white; XIV, 425 p. 313 illus., 183
| Medios de comunicación | Libros Hardcover Book (Libro con lomo y cubierta duros) |
| Publicado | 24 de marzo de 2020 |
| ISBN13 | 9789811512117 |
| Editores | Springer Verlag, Singapore |
| Páginas | 425 |
| Dimensiones | 150 × 220 × 20 mm · 822 g |
| Editor | Ishiwara, Hiroshi |
| Editor | Okuyama, Masanori |
| Editor | Park, Byung-Eun |
| Editor | Sakai, Shigeki |
| Editor | Yoon, Sung-Min |
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