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Research on the Radiation Effects and Compact Model of SiGe HBT Sun 1st ed. 2018 edition
Research on the Radiation Effects and Compact Model of SiGe HBT
Sun
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
176 pages, 171 Illustrations, black and white; XXIV, 176 p. 171 illus.
| Medios de comunicación | Libros Book |
| Publicado | 2 de noviembre de 2017 |
| ISBN13 | 9789811046117 |
| Editores | Springer Verlag, Singapore |
| Páginas | 168 |
| Dimensiones | 244 × 167 × 17 mm · 449 g |
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