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Stability of Igzo-based Thin-film Transistor: Stability and Temperature-dependence Assessment of Igzo Tfts John Wager
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Stability of Igzo-based Thin-film Transistor: Stability and Temperature-dependence Assessment of Igzo Tfts
John Wager
Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.
| Medios de comunicación | Libros Paperback Book (Libro con tapa blanda y lomo encolado) |
| Publicado | 7 de septiembre de 2010 |
| ISBN13 | 9783838399638 |
| Editores | LAP LAMBERT Academic Publishing |
| Páginas | 152 |
| Dimensiones | 225 × 9 × 150 mm · 231 g |
| Lengua | Inglés |
