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Emerging Resistive Switching Memories - SpringerBriefs in Materials Jianyong Ouyang 1st ed. 2016 edition
Emerging Resistive Switching Memories - SpringerBriefs in Materials
Jianyong Ouyang
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
101 pages, 31 black & white illustrations, 41 colour illustrations, 10 colour tables, biography
| Medios de comunicación | Libros Paperback Book (Libro con tapa blanda y lomo encolado) |
| Publicado | 11 de julio de 2016 |
| ISBN13 | 9783319315706 |
| Editores | Springer International Publishing AG |
| Páginas | 93 |
| Dimensiones | 155 × 235 × 6 mm · 158 g |
| Lengua | Alemán |