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Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies Nabil Shovon Ashraf
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
| Medios de comunicación | Libros Hardcover Book (Libro con lomo y cubierta duros) |
| Publicado | 27 de marzo de 2025 |
| ISBN13 | 9783031842856 |
| Editores | Springer International Publishing AG |
| Páginas | 129 |
| Dimensiones | 174 × 249 × 14 mm · 424 g |
| Lengua | Alemán |