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Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations - Electronic Materials: Science & Technology 2021 edition
Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations - Electronic Materials: Science & Technology
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices.
383 pages, 186 Illustrations, black and white; VI, 383 p. 186 illus.
| Medios de comunicación | Libros Hardcover Book (Libro con lomo y cubierta duros) |
| Publicado | 16 de octubre de 2021 |
| ISBN13 | 9783030424237 |
| Editores | Springer Nature Switzerland AG |
| Páginas | 383 |
| Dimensiones | 150 × 220 × 20 mm · 823 g |
| Lengua | Alemán |
| Editor | Ielmini, Daniele |
| Editor | Rupp, Jennifer |
| Editor | Valov, Ilia |