Recomienda este artículo a tus amigos:
Silicon-germanium Heterojunction Bipolar Transistors John D. Cressler
Silicon-germanium Heterojunction Bipolar Transistors
John D. Cressler
A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe.
588 pages, black & white illustrations
| Medios de comunicación | Libros Hardcover Book (Libro con lomo y cubierta duros) |
| Publicado | 31 de enero de 2003 |
| Fecha de lanzamiento original | 2002 |
| ISBN13 | 9781580533614 |
| Editores | Artech House Publishers |
| Páginas | 588 |
| Dimensiones | 167 × 237 × 39 mm · 1,04 kg |