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Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition Ayers, John E. (University of Connecticut, Storrs, USA) 2.º edición
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Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition
Ayers, John E. (University of Connecticut, Storrs, USA)
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
659 pages, 330 black & white illustrations, 22 colour illustrations, 49 black & white tables
| Medios de comunicación | Libros Hardcover Book (Libro con lomo y cubierta duros) |
| Publicado | 18 de octubre de 2016 |
| ISBN13 | 9781482254358 |
| Editores | Taylor & Francis Inc |
| Páginas | 643 |
| Dimensiones | 260 × 184 × 42 mm · 1,39 kg |
| Lengua | Inglés |
